Monolithic integration of erbium-doped amplifiers with silicon-on-insulator waveguides.
نویسندگان
چکیده
Monolithic integration of Al2O3:Er3+ amplifier technology with passive silicon-on-insulator waveguides is demonstrated. A signal enhancement of >7 dB at 1533 nm wavelength is obtained. The straightforward wafer-scale fabrication process, which includes reactive co-sputtering and subsequent reactive ion etching, allows for parallel integration of multiple amplifier and laser sections with silicon or other photonic circuits on a chip.
منابع مشابه
Spontaneous decay rates in active waveguides.
We present a new method of measuring the guided, radiated, and total decay rates in uniform waveguides. It is also shown theoretically that large modifications of the total decay rate can be achieved in realistic erbium-doped fiber amplifiers and erbium-doped waveguide amplifiers with effective mode area radii smaller than approximately 1 microm.
متن کاملInvestigation of the Spectral Advantages of Sol-Gel Layered Erbium Doped Waveguide Amplifiers
Abstracf: High levels of net gain have recently been reported in sol-gel phosphorous-aluminium codoped silica waveguides. However, compositions providing both high net gain and large spectral width have not yet been achieved. In this paper we propose the use of laminated cores of multiple compositions to achieve improved spectral performance in erbium-doped waveguide amplifiers. We demonstrate ...
متن کاملEnhanced Gain in Er-doped Al2O3 Channel Waveguide Amplifiers
Erbium-doped aluminum oxide amplifiers with varying erbium concentration have been fabricated on thermally oxidized silicon substrates. Significant net internal gain of up to 1.6 dB/cm has been measured at 1533 nm for the optimum Er concentration. Furthermore, net gain has been demonstrated over a wavelength range of 40 nm, including the telecom C-band, demonstrating the potential for amplifier...
متن کاملFast quenching processes and their impact on 1.5-μm amplifier performance in Al2O3:Er 3+ waveguides
Spectroscopic investigations reveal the presence of a fast quenching process in erbium-doped aluminum oxide waveguides. We quantify the percentage of quenched ions and make predictions about the amplifier performance. Optical amplifiers; integrated optics materials; fast quenching processes; aluminum oxide
متن کاملPhotoluminescence and attenuation of spray-pyrolysis-deposited erbium-doped Y2O3 planar optical waveguides.
Erbium-doped Y20 3 planar optical waveguides have been fabricated by spray-pyrolysis deposition. The attenuation spectrum of the waveguide shows peaks that are due to absorption of the erbium ions. The as-deposited layers also show photoluminescence sharply peaking at 1540 nm with additional Stark splitting. The thin layers of Er 3:Y 203 obtained are promising for the realization of integrated-...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
- Optics express
دوره 18 26 شماره
صفحات -
تاریخ انتشار 2010